In Arabidopsis the AOP2 gene plays a role in the secondary modification of aliphatic (methionine-derived) glucosinolates, namely the conversion of methylsulfinylalkyl glucosinolates to form alkenyl glucosinolates, and also influences aliphatic glucosinolate accumulation.\n\nResults: This study characterises the primary structural variation buy MK-2206 in the coding sequences of the AOP2 gene and identifies three different AOP2 alleles based on polymorphisms in exon two. To help determine the regulatory mechanisms mediating AOP2 expression amongst accessions, AOP2 5′ regulatory

regions were also examined however no major differences were identified. Expression of the AOP2 gene was found to be most abundant in leaf and stem tissue and was also found to be light dependent, with a number of light

regulatory elements identified in the promoter region of the gene. In addition, a study was undertaken to demonstrate that the Arabidopsis AOP2 gene product is functional in planta. The over-expression of a functional AOP2 allele was found to successfully convert the precursor methylsulfinyl alkyl glucosinolate see more into the alkenyl form.\n\nConclusions: The expression of the AOP2 gene has been found to be influenced by light and is most highly expressed in the photosynthetic parts of the Arabidopsis plant. The level of AOP2 transcript decreases rapidly in the absence of light. AOP2 exists as at least three alleles in different Arabidopsis accessions and we have demonstrated that one of these, AOP2-2, is functionally able to convert methylsulfinyl glucosinolates into the alkenyl form. The demonstration of the in planta functionality of the Arabisopsis

AOP2 gene is an important step in determining the feasibility of engineering glucosinolate profiles in food plants.”
“Dielectric breakdown of metal-insulator-metal (MIM) diodes can result in the development of voltage-controlled negative resistance (VCNR) in the current-voltage (I-V) characteristics. Electroluminescence from the MIM diode appears at the same time as VCNR develops. The spectra of electroluminescence associated with VCNR of Al-Al2O3-Au diodes with KPT-8602 chemical structure anodic Al2O3 has been measured for photon energies between 1.8 eV, the lowest photon energy the photomultiplier can detect, and 3.4 eV, using narrow-band interference filters. Electroluminescent photons have maximum intensity between 1.8 and 2.4 eV with a peak at similar to 2.2 eV. The voltage threshold for electroluminescence in Al-Al2O3-Au diodes, V-TH, is 1.7 to 2.0 V; it is associated with an impurity band in amorphous Al2O3. Electrons injected into the impurity band can recombine with radiative centers in Al2O3 or can be emitted into vacuum. The range of values Of V-TH is the same as the range of values of the barrier height at the Al-Al2O3 interface measured by internal photo emission or by tunneling.