Phys Rev B 2005, 71:115440.CrossRef selleck screening library 33. Comedi D, Zalloum OHY, Irving EA, Wojcik J, Roschuk T, Flynn MJ, Mascher P: X-ray-diffraction study of crystalline Si nanocluster formation in annealed silicon-rich silicon oxides. J Appl Phys 2006, 99:023518.CrossRef 34. Heng CL, Zalloum OHY, Wojcik J, Roschuk T, Mascher P: On the effects of double-step anneal treatments on light emission from Er-doped Si-rich silicon oxide. J Appl Phys 2008, 103:024309.CrossRef 35. Podhorodecki A, Zatryb G, Misiewicz J, Wojcik J, Mascher P: Influence of the annealing temperature and silicon concentration on the absorption and emission properties of Si nanocrystals.
J Appl Phys 2007, 102:043104.CrossRef 36. Podhorodecki A, Misiewicz J, Gourbilleau F, Rizk R: Absorption mechanisms of silicon nanocrystals obtained at different hydrogen partial pressure in co-sputtered (SRSO) film. Electrochemical Solid State Lett. 2008, 11:K31-K33.CrossRef 37. Hao XJ, Podhorodecki A, Shen YS, Zatryb G, Misiewicz J, Green MA: Effects of non-stoichiometry of O/Si ratio on the structural and optical properties of silicon Mocetinostat concentration quantum dots in a silicon dioxide matrix. Nanotechnology 2009, 20:485703.CrossRef 38. Pacchioni G, Skuja L,
Griscom DL: Defects in SiO2 and Related Dielectrics: Science and Technology. New York: Springer; 2000:73.CrossRef 39. Zatsepin AF, Biryukov DY, Kortov VS: Analysis of OSEE spectra
of irradiated dielectrics. Latv J Phys Tech Sci 2000, 6:83. 40. Skuja L, Güttler B, Schiel D, Silin AR: Quantitative analysis of the concentration of interstitial O 2 molecules in SiO 2 glass using luminescence and Raman spectroscopy. J Appl Phys 1998, 83:6106.CrossRef 41. Cueff S, Labbé C, Dierre B, Fabbri F, Sekiguchi T, Portier X, Rizk R: Investigation of emitting centers in SiO2 codoped with silicon nanoclusters and Er3+ ions by cathodoluminescence technique. J Appl Phys 2010, 108:113504.CrossRef 42. Barfels T: Kathodolumineszenz Adenosine amorpher und kristalliner Modifikationen von SiO2 und GeO2. PhD dissertation: Rostock University; 2001. 43. Varshni VP: Temperature dependence of the energy gap in semiconductors. Physica 1967, 34:149.CrossRef 44. Cho Y, Gainer GH, Fischer HJ, Song JJ, Keller S, Mishra UK, DenBaars SP: S-shaped temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells. Appl Phys Lett 1998, 73:1370.CrossRef 45. Street RA: Hydrogenated Amorphous Silicon. Cambridge: Cambridge University Press; 2005. Chap. 7 46. Zatryb G, Podhorodecki A, Hao XJ, Misiewicz J, Shen YS, Green MA: Correlation between stress and carriers nonradiative recombination for silicon nanocrystals in an oxide matrix. Nanotechnology 2011, 22:335703.CrossRef 47. Polman A: Erbium implanted thin film photonic materials. J Appl Phys 1997, 82:1.CrossRef 48.